Study of the electronic fundamental transition of zincblende InN/InGaN quantum wells
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference13 articles.
1. Growth and properties of InN, InGaN, and InN/InGaN quantum wells
2. InN/GaN SQW and DH structures grown by radio frequency plasma‐assisted MBE
3. Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
4. Valence band splittings and band offsets of AlN, GaN, and InN
5. Band-Offsets Between Group-III-Nitrides
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1. Atomistic analysis of piezoelectric potential fluctuations in zinc-blende InGaN/GaN quantum wells: A Stillinger-Weber potential based analysis;Physical Review B;2021-04-19
2. High cubic phase purity and growth mechanism of cubic InN thin-films by Migration Enhanced Epitaxy;Thin Solid Films;2018-02
3. Hydrogenic impurity states in zinc-blende InxGa1−xN/GaN in cylindrical quantum well wires;Superlattices and Microstructures;2011-05
4. Nitrogen-electronegativity-induced bowing character in ternary zincblende Ga1−xInxN alloys;Journal of Alloys and Compounds;2010-08
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