Photoluminescence from Nanocrystalline Silicon Prepared by Plasma CVD and Oxidation-Reference-Cited by-同舟云学术

Photoluminescence from Nanocrystalline Silicon Prepared by Plasma CVD and Oxidation

Published:1993 Issue: Volume:298 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Veprek S.,Rückschloβ M.,Landkammer B.,Ambacher O.

Abstract

AbstractLight emitting nanocrystalline silicon has been prepared by a completely dry processing which uses standard silicon technology. This enables us to prepare compact films on various substrates and to control the crystallite size. Dependence of the photoluminescence intensity and its peak energy on the crystallite size is reported and compared with current theoretical models.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference18 articles.

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