Visible Electro- and Photoluminescence from Porous Silicon and its Related Optoelectronic Properties-Reference-Cited by-同舟云学术

Visible Electro- and Photoluminescence from Porous Silicon and its Related Optoelectronic Properties

Published:1991 Issue: Volume:256 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Koshida Nobuyoshi,Koyama Hideki

Abstract

ABSTRACTThe optoelectronic properties of porous Si (PS) are presented in terms of electroluminescence (EL), photoluminescence (PL), photoconduction (PC), and optical absorption. Observations of injection-type EL, efficient PL, band-gap widening, and photosensitivities In the visible region are consistent with the quantum size effect model in PS.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference14 articles.

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2. Characterization Studies of p‐Type Porous Si and Its Photoelectrochemical Activation

3. Photoelectrochemical Effects of Surface Modification of n‐Type Si with Porous Layer

4. Photoelectrochemical Behavior of n-Type Porous-Si Electrodes

5. The Current‐Voltage Characteristics of a Photoelectrochemical Cell Using p‐Type Porous Si

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