An Alternate Mechanism for Porous Si Photoluminescence: Recombination in SiHx Complexes

Author:

Prokes S. M.,Glembocki O. J.,Bermudez V. M.,Kaplan R.,Friedersdorf L. E.,Searson P. C.

Abstract

ABSTRACTPorous silicon layers have been formed which exhibit photoluminescence (PL) peaks that do not blueshift with increasing porosity. Hydrogen desorption experiments have been performed in vacuum under anneals between 230°C–390°C. Simultaneous, in-situ PL measurements show that the PL intensity decreases and disappears with decreasing hydrogen content. Infrared spectroscopy (IR) measurements also show loss of hydride species in the same temperature range. These results indicate that hydrogen is important in the PL process. We suggest that silicon hydrides are the source of PL in porous SI.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Porous silicon;Semiconductor Science and Technology;1995-09-01

2. Effects of surface treatment on porous silicon photoluminescence;Physica Status Solidi (a);1995-06-16

3. In-depth inhomogeneous photoluminescent properties of porous silicon layers;Surface and Interface Analysis;1994-07

4. Light emission from crystalline silicon and amorphous silicon oxide (SiOx) nanoparticles;Journal of Electronic Materials;1994-01

5. Further evidence for quantum confinement in porous silicon;Applied Physics Letters;1993-05-10

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