Author:
Rocher André,Snoeck Etienne,Goldstein Léon,Jacquet Joël,Fortin Catherine
Abstract
AbstractThe crystalline structure of metamorphic heterostructures grown by epitaxy has been studied by digital processing of High Resolution Electron Microscopy (HREM) images. Two systems have been investigated: the GaSb/(001)GaAs, known to be fully relaxed by a perfect Lomer dislocation network and the GaAs/(001)InP relaxed by partial and 60° dislocations randomly distributed. A transition zone can be defined between the perfect substrate and the relaxed epitaxial layer: its thickness is less than 20Å in GaSb/GaAs and more than 80Å in GaAs/InP. These results indicate that the misfit dislocations are only one of the elements involved in the relaxation of misfit stress.
Publisher
Springer Science and Business Media LLC
Reference9 articles.
1. 9. Rocher A. , Kang J. M. , Atmani H. , Crestou J. , Vanderschaeve G. , Lassabatère L. and Bonnet R. , Inst. Phys. Conf. Ser. n° 117, p. 509, (1991)
2. Transmission Electron Microscopy
3. GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs
4. 3. Hÿtch M. J. , Scanning Microscopy Suppl. 11, Signal and Image Processing in Microscopy and Microanalysis, (Ed P. Hawkes), (1997)
5. Sur l’élaboration par jets moléculaires et les propriétés optiques d’hétérojonctions Ga Al Sb/Ga Sb
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