New Techniques for the Nanostructural Characterization of Semiconductor Materials and Devices Using Combined Focused Ion Beam and Transmission Electron Microscopy Techniques

Abstract

AbstractWe describe novel techniques which extend the range of available nanostructural characterization capability for semiconductor materials and devices. These techniques combine high spatial resolution imaging and spectroscopy using transmission electron microscopy (TEM) and focused ion beam (FIB) microscopy. Specific capabilities described include nanoscale imaging of dopant distributions, ultra-high resolution secondary ion mass spectroscopy (SIMS) and tomographic image reconstruction.