Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals-Reference-Cited by-同舟云学术

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

Published:1996 Issue: Volume:423 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Eckstein R.,Hofmann D.,Makarov Y.,Müller St. G.,Pensl G.,Schmitt E.,Winnacker A.

Abstract

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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