On mass transport and surface morphology of sublimation grown 4H silicon carbide-Reference-Cited by-同舟云学术

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On mass transport and surface morphology of sublimation grown 4H silicon carbide

Published:2002-12 Issue:1-2 Volume:246 Page:31-36
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Schulz D,Doerschel J,Lechner M,Rost H.-J,Siche D,Wollweber J

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Growth of bulk SiC

2. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

3. K. Böttcher, D. Schulz, Mater. Sci. Forum (2002), submitted for publication.

4. D. Schulz, G. Wagner, J. Doerschel, J. Dolle, W. Eiserbeck, T. Müller, H.-J. Rost, D. Siche, J. Wollweber, Mater. Sci. Eng. B 61, 62 (1999) 86.

5. Silicon Carbide-1973;Tairov,1973

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Process Induced Extended Defects in SiC Grown via Sublimation;MRS Proceedings;2002

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