LPCVD Tungsten Deposition on Porous Silicon for Formation of Buried Conductors

Abstract

ABSTRACTWe report results on the feasibility of forming buried conductors under single crystal silicon using low pressure chemical vapor deposition of tungsten on the internal surfaces of porous silicon. The infiltration of tungsten into the pores depends on the porous silicon porosity, and on tungsten deposition process parameters such as deposition duration, total deposition pressure, and carrier gas species. The resulting tungsten-porous silicon layers were characterized by transmission and scanning electron microscopy, by Rutherford backscattering and x-ray spectroscopy and by four-point probe resistivity measurements.