Author:
Maqbool Muhammad,Richardson H. H.,Kordesch M. E.
Abstract
ABSTRACTPraseodymium (Pr) doped aluminum nitride (AlN), gallium nitride (GaN) and boron nitride (BN) thin films deposited on Si (111) substrate are studied with cathodoluminescence. AlN:Pr and GaN:Pr films are deposited at 77 K and room temperature respectively while BN:Pr films at 750 K by reactive sputtering, using 100–200 Watts RF power, 5–10 mTorr nitrogen. Metal targets of Al and B with Pr and a liquid target of Ga with solid Pr are used. The dominant peaks observed in the visible range result from 3P0 → 3H4, 3P1→ 3H5, and 3P0 → 3F2 transitions in AlN:Pr, 3P0 → 3H4, 3P0 → 3H6, and 3P0 → 3F2 transitions in GaN:Pr and from 3P0 → 3H4, 3P1→ 3H5, 3P0 → 3H6, and 3P0 → 3F2 transitions in BN:Pr. Additional peaks are observed from AlN:Pr at 335 nm and 385 nm from 1S0 → 1D2 and 1S0 → 1I6 which are not observed in GaN:Pr and BN:Pr films.
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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