Author:
Eom C. B.,Van Dover R.B.,Phillips Julia M.,Fleming R.M.,Cava R.J.,Marshall J.H.,Werder D.J.,Chen C.H.,Fork D.K
Abstract
AbstractWe have fabricated epitaxial ferroelectric heterostructures of isotropic metallic oxide (SrRuO3) and ferroelectric thin films [SrRuO3/Pb(Zr0.52Ti0.48)O3 /SrRuO3] on (100) SrTiO3 and YSZ buffer layered Si substrates by 90° off-axis sputtering. These heterostructures have high crystalline quality and coherent interfaces as revealed by X-ray diffraction, Rutherford backscattering spectroscopy and cross-sectional transmission electron microscopy. The ferroelectric layers exhibit superior fatigue characteristics over 1010 cycles with large remnant polarization.
Publisher
Springer Science and Business Media LLC
Cited by
10 articles.
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