Author:
Cooper J. A.,Ryu S-H.,LI Y.,Matin M.,Spitz J.,Morisesette D. T.,McGlothlin H. M.,Das M. K.,Melloch M. R.,Capano M. A.,Woodall J. M.
Abstract
ABSTRACTSiC power switching devices have demonstrated performance figures of merit far beyond the silicon theoretical limits, but much work remains before commercial production will be feasible. A significant fraction of the remaining work centers on materials science issues. This paper reviews the current status of unipolar power switching devices in SiC and identifies the major technological and material science barriers that need to be overcome.
Publisher
Springer Science and Business Media LLC
Reference27 articles.
1. 23. Santharumar R. , Das M. K. , Capano M. A. , Cooper J. A. , and Melloch M. R. , unpublished.
2. X-Ray Topographic Studies of Defects in PVT 6H-SiC Substrates and Epitaxial 6H-SiC Thin Films
3. Advances in SiC MOS Technology
4. Improved oxidation procedures for reduced SiO2/SiC defects
5. 20. Maranowski M. M. and Cooper J. A. Jr , IEEE Trans. Electr. Dev. 46, (1999).
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献