Diffusion of Ion Implanted Ruthenium and Osmium IN GaAs and InP

Abstract

ABSTRACTThe redistribution of the dopants Ru and Os implanted into GaAs and InP as well as the structural properties of the hosts are investigated in dependence of the annealing procedure. Results of Rutherford backscattering and secondary-ion-mass-spectroscopy experiments are presented. The RBS results of Os in GaAs annealed at 850°C indicate that an amount of about 1018 cm-3 Os is on substitutional sites. Two different diffusion processes are observed: an uphill diffusion in the amorphized region and a Fick-type diffusion in the tail of the depth profiles. The diffusion coefficients for Ru in GaAs at 850°C and Os in InP at 750°C are estimated to 4*10-14 cm2s-1 and 8*10-15 cm2s-1, respectively.