Author:
Uchida K.,Yu P. Y.,Zeman J.,Kwok S. H.,Teo K. L.,Su Z. P.,Martinez G.,Arai T.,Matsumoto K.
Abstract
ABSTRACTIn this paper we review the use of high pressure techniques to investigate the optical properties of partially ordered GalnP epitaxial layers grown on GaAs substrates. In particular, we demonstrate the ability of high pressure to modify the band alignment at the GalnP/GaAs interface and hence to alter the optical properties of heterostructures fabricated from partially ordered GalnP on GaAs.
Publisher
Springer Science and Business Media LLC
Reference34 articles.
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