Author:
Gotoh Jun,Shirai Hajime,Hanna Jun-ichi,Shimizu Isamu
Abstract
ABSTRACTHigh quality ZnSe films were successfully grown on GaAs(100) at low temperatures, 200 °C or lower by Hydrogen Radical-enhanced Chemical Vapor Deposition (HRCVD). Defects were makedly eliminated by the following factors: selection of source materials; avoidance of ion bombardment; and suppression of formation of adducts by alternate gas supply. Strained-layer superlattice (SLS) consisting of ZnSe as the well and ZnS0. 1Se0.9 as the barrier was made by this technique. Emission line attributed to the free exciton was dominantly observed in the SLS.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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