Growth of Gallium Arsenide on Silicon in Masked, Etched Trenches

Abstract

AbstractGaAs layers were grown in recessed silicon trenches for monolithic integration of GaAs and silicon devices. These layers were examined using cathodoluminescence (CL) and transmission electron microscopy (TEM). The CL showed no dependence on distance from the sidewall edge within its limit of resolution. Cross-sectional TEM micrographs showed the GaAs grown on the sidewall to depend on the sidewall orientation. Material grown on the near-{111} sidewalls was comparable to that grown on the well bottom, while the GaAs grown on the near-{110} sidewalls showed poorer crystal quality. A photodetector was fabricated in the recessed GaAs/Si; this device could be easily adapted to a monolithically integrated structure.