Zinc oxide nanocluster formation by low energy ion implantation

Abstract

ABSTRACTVariable size nanocluster embedded in silicon substrate were obtained by low energy implantation methods. We used optical spectroscopy to measure the optical properties of the implanted samples. The implantation parameters like the ions energy, dose and sputtering rate were calculated with SRIM [13]. Most of the implanted Zn ions (83%) clustered and oxidized during the implantation process, with the remaining 17% being oxidized during annealing in air.