Growth of C60 Fullerene Films on Semiconductor Surfaces

Abstract

AbstractWe report on a study of vacuum-deposited thin films of C60 fullerene on Si (100) and InP (100) semiconductor surfaces. The film morphology and C60—substrate interactions were investigated by using atomic force microscopy (AFM) and Fourier transform infrared spectroscopy (FTIR). For the film deposition, both patterned Si aand InP surfaces were used. It was found that the stronger interactions occur between C60 molecules and Si surface, than between C60 molecules and InP surface. On InP surface with microrelief of parallel V-grooves oriented in [011] direction, C60 films grow preferentially above the groove walls, with C60 grains arrayed in the direction perpendicular to the groove axis.