The Production of Porous Structures on Si, Ge and GaAs by High Dose Ion Implantation.

Abstract

ABSTRACTThis paper presents new data on the previously observed porous structures which can be developed in high dose, ion implanted Ge. In addition, we provide strong evidence to suggest that such porous structures can be formed in high dose, ion implanted Si and GaAs substrates under particular implant conditions. Comparison of the various systems using RBS analysis indicates that heavy ion doses as low as 1014 cm−2 can give rise to such structural modifications in GaAs, whereas doses of 1015 cm−2 are needed to observe an effect with Ge and doses usually exceeding 1016cm−2 are required for Si.