Anomalous near-surface effects in room temperature implanted germanium-Reference-Cited by-同舟云学术

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Anomalous near-surface effects in room temperature implanted germanium

Published:1983-05 Issue: Volume:209-210 Page:303-307
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Lawson E.M.,Short K.T.,Williams J.S.,Appleton B.R.,Holland O.W.,Schow O.E.

Publisher

Elsevier BV

Subject

General Engineering

Reference9 articles.

1. Ion implantation in semiconductors;Mayer,1970

2. Characterization of damage in ion implanted Ge

3. Projected range statistics;Gibbons,1975

4. The application of high-resolution Rutherford backscattering techniques to near-surface analysis

5. O.W. Holland, B.R. Appleton, J. Narayan and O.E. Schow III, unpublished.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanostructured germanium prepared via ion beam modification;Journal of Materials Research;2013-03-21

2. Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries;Journal of Power Sources;2013-02

3. Insights for void formation in ion-implanted Ge;Thin Solid Films;2011-07

4. Self-implantation energy and dose effects on Ge solid-phase epitaxial growth;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-01

5. Multi-Ion Beam Lithography and Processing Studies;MRS Proceedings;2011

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