Heteroepitaxial Growth of Sic on Si - Highly Mismatched System -

Abstract

AbstractSingle crystals of cubic(beta) SiC were heteroepitaxially grown on Si to ameliorate the large lattice mismatch of 20 %. The structure and the role of the carbonized layer used for crystal growth are discussed. Single crystals were successfully grown on Si(100) and(111). Antiphase domains on Si(100) were examined to obtain smooth surfaces. The use of Si(100) off-axis substrates oriented towards [011] allowed the successufulelimination of the antiphase domains. Anisotropy was found in the electrical properties of SiC on off-axis substrates. Possible applications are described.