Author:
Martínez Oscar,Hortelano Vanesa,Parra Vicente,Jimenez Juan,Prutskij Tatiana,Pelosi Claudio
Abstract
AbstractInGaP layers grown on non-polar and polar GaAs substrate faces are investigated by Raman spectroscopy, microphotoluminescence and cathodoluminescence. The growth on polar faces benefits disorder respect to the layers grown on non polar (001) faces. It is shown that both (111)Ga and (111)As faces result in disordered InGaP layers. However, the layers grown on (111)As faces present inhomogeneous composition. The layers grown on (111)Ga faces present homogeneous composition close to lattice matching and are almost disordered.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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