InxGa1−xAs/InP quantum well structures grown on [111]B InP
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference17 articles.
1. Nonlinear optical response of [111] growth axis strained‐layer superlattices
2. Near‐ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasers
3. Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
4. Optical characterizations of (111) oriented InGaAs/InAlAs strained quantum wells grown on InP substrates
5. Modulation of internal piezoelectric fields in strained‐layer superlattices grown along the [111] orientation
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1. On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2019-05
2. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01
3. InAsP-based quantum wells as infrared pressure gauges for use in a diamond anvil cell;Journal of Applied Physics;2012-10
4. Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces;Journal of Electronic Materials;2010-03-30
5. InGaP Layers Grown on Different GaAs Surfaces for High Efficiency Solar Cells;MRS Proceedings;2009
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