Nucleation and Growth in Vicinity of Growing Surface in Making Microcrystalline Silicon

Abstract

ABSTRACTA close study was conducted on microcrystalline Silicon (μc-Si) prepared by PE-CVD (Plasma Enhanced CVD) from SiF4 with the assistance of atomic hydrogen. The atomic hydrogen played a major role in either making precursors, SiFnHm (n+m=3), by gas phase reactions with the fragments, SiFn (≤3), or constructing Si-network in the vicinity of the growing surface. Proper conditions of nucleation were markedly different from those of growth with respect to parameters, flow of atomic hydrogen and substrate temperature.