The Influence of Doping on the Electronic Properties of Hydrogenated Amorphous Silicon.

Abstract

ABSTRACTThe results of transient photoconductivity and photoinduced absorption measurements in lightly phosphorus and boron doped (0-10 ppm ) a-Si:H films at T = 300 K are presented. From the observed increase of minority carrier trapping with doping it is concluded that even light doping leads to a strong increase of the density of deep traps. Furthermore an abrupt change of the behaviour of the transient photoconductivity between 2 ppm and 3 ppm B2H6 is observed. This change may be interpreted as the transition to a p-type semiconductor.