Author:
Stimmer J.,Reittinger A.,Abstreiter G.,Holzbrecher H.,Buchal Ch.
Abstract
AbstractWe report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.
Publisher
Springer Science and Business Media LLC
Reference8 articles.
1. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
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