Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:ff(Er)-Reference-Cited by-同舟云学术

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Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:ff(Er)

Published:1996 Issue: Volume:422 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Yassievich I. N.,Gusev O. B.,Bresler M. S.,Fuhs W.,Kuznetsov A. N.,Masterov V. F.,Terukov E. I.,Zakharchenya B. P.

Abstract

AbstractPhoto- and electroluminescence were studied in erbium-doped amorphous hydrogenated silicon films. A mechanism of excitation of erbium ions by defect-related Auger process is proposed which permits to explain consistently the whole set of our experimental results.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference7 articles.

1. Luminescence quenching in erbium‐doped hydrogenated amorphous silicon

2. Electrical and optical properties of a-Si:H, a-SiGe:H and a-SiSn:H deposited by magnetron assisted silane decomposition

3. Temperature dependence and quenching processes of the intra-4fluminescence of Er in crystalline Si

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. De-excitation mechanisms of Er3+ in Er-doped hydrogenated amorphous silicon prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition;Journal of Non-Crystalline Solids;2003-12

2. Defect-related Auger excitation of erbium ions in amorphous silicon;Journal of Non-Crystalline Solids;1998-05

3. Excitation and temperature quenching of Er-induced luminescence ina-Si:H(Er);Physical Review B;1997-10-15

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