Pressure-dependent DLTS Experiments on Si-DOPED AlGaAs-Reference-Cited by-同舟云学术

Pressure-dependent DLTS Experiments on Si-DOPED AlGaAs

Published:1987 Issue: Volume:104 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Farmer John W.,Hjalmarson Harold P.,Samara G. A.

Abstract

ABSTRACTPressure dependent Deep Level Transient Spectroscopy (DLTS) experiments are used to measure the properties of the deep donors (DX-centers) responsible for the persistent photoconductivity effect in Si-doped AlGaAs. The sample dependence of the DLTS spectra shows evidence for a defect complex involved in the DX-center.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

1. Assessment of persistent-photoconductivity centers in MBE grown Al x Ga1-x as using capacitance spectroscopy measurements

2. Deep level characterization of AlGaAs and selectively doped N-AlGaAs/GaAs heterojunctions

3. Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments

4. Investigation of theDXcenter in heavily dopedn-GaAs

5. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge redistribution in the multiple levels of theDXcenter;Applied Physics Letters;1991-09-30

2. Effect of indium on the properties ofDXcenters in Si‐doped Iny(Ga0.3Al0.7)1−yAs;Journal of Applied Physics;1990-08-15

3. A new method to analyze multiexponential transients for deep‐level transient spectroscopy;Journal of Applied Physics;1990-05

4. Mossbauer spectra and the DX-centre complex in AlGaAs;Journal of Physics: Condensed Matter;1989-08-07