Nanoindentation cracking in gallium arsenide: Part II. TEM investigation-Reference-Cited by-同舟云学术

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Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Published:2013-10-22 Issue:20 Volume:28 Page:2799-2809
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Pouvreau Cédric,Wasmer Kilian,Hessler-Wyser Haïcha,Ganière Jean-Daniel,Breguet Jean-Marc,Michler Johann,Schulz Daniel,Giovanola Jacques Henri

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Dicing of gallium–arsenide high performance laser diodes for industrial applications

2. The role of atomic size asperities in the mechanical deformation of nanocontacts

3. Dislocation-mobility-controlled cracking in gaas caused by constantrate indentation

4. Nanoindentation pop-in effect in semiconductors

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