Abstract
ABSTRACTA new novel thin film high voltage transistor in a-Si:H is described in this paper. This new structure extends the operation of a-Si:H TFT to 500 volts or more. The fabrication process of this new high voltage transistor is simple and compatible with that of the conventional low voltage TFT. The high voltage TFT can be switched by low voltage signals and is demonstrated to be capable of switching several hundreds of volts.
Publisher
Springer Science and Business Media LLC
Cited by
16 articles.
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