Simulation and Modeling of Amorphous Silicon Thin-Film Devices

Abstract

AbstractWe describe a computer program which solves the complete set Of transport equations for device-quality amorphous silicon in two spatial dimensions and time. When modeling amorphous silicon devices, it is extremely important to account for the high concentration of time-dependent trapped charge present due to the continuous distribution of localized states in the semiconductor's bandgap. Our model is based on a realistic density-of-states distribution and includes a detailed description of the trap occupation functions for electrons and holes. These occupation functions are calculated self-consistently with respect to the electrostatic potential and free-carrier concentrations within the semiconductor.