Radiation-Induced Segregation of Metals At Moving SiO2-Amorphous Si Interfaces

Abstract

AbstractSecondary ion mass spectrometry and Rutherford backscattering/channeling analysis have been used to study the segregation of Au at moving Si-SiO2 interfaces during bombardment of Si with 15 keV O- ions. Essentially 100% of the Au is found to segregate at a bombardment temperature of 250°C, whereas only partial segregation occurs for room temperature bombardment. Up to 10 monolayers of Au can be segregated in disordered Si behind an SiO2 layer at 250°C. These results are discussed in terms of ion-assisted migration of Au in disordered Si and extremely low solubilities of Au in SiO2.