High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasma Pre-Treatment-Reference-Cited by-同舟云学术

High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasma Pre-Treatment

Published:2004 Issue: Volume:814 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Shin Moon Young,Han Sang-Myeon,Lee Min-Cheol,Shin Hee-Sun,Han Min-Koo,Kwon Jang-Yeon,Noguchi Takashi

Abstract

AbstractWe have proposed nitrous oxide (N2O) plasma pre-treatment in order to reduce the oxide charge densities as well as to increase the breakdown field of silicon dioxide film for flexible display. Our experimental results show that the proposed treatment improved both the flat-band voltage from –3V to –1.8V and the breakdown voltage of gate oxide from 7MV/cm to 9.5MV/cm, respectively. The proposed treatment also improved poly-Si TFT characteristics such as low sub-threshold swing of 0.43V/dec.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P-25: Nanocrystalline Silicon Thin Film Transistor Fabricated without any Substrate Heating for a Flexible Display;SID Symposium Digest of Technical Papers;2008

2. The Effect of Plasma Treatment on the SiO2 film fabricated without Substrate Heating for Flexible Electronics;MRS Proceedings;2008