Abstract
ABSTRACTThe structure and morphologies of the thin amorphous a-Si and oc-Ge films crystallized “in situ” in an electronic microscope by pulsed YAG laser have been studied using conventional and high-resolution transmission electronic microscopy observations. It is found that the laser induced nucleation rate (I) is laser pulse length dependent. I is about 1021-1022 cm−3 s−1 (α-Si) and 1023-1025 cm−3 s−1 (α-Ge) near the melting point. Explosive dendritic formation is the result of competition between solid state light induced nucleation and melting mediated explosive growth.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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