Photocreated Defects and Light-Induced ESR in a-Si:H and Related Alloy Films

Abstract

AbstractTwo major problems in the field of a-Si:H and related alloy films such as a-Sil-xNx:H are addressed in this contribution, namely, the photocreation of neutral Si dangling bonds and the origin of the components of the light-induced ESR (LESR). We have proposed a new model for the photocreation of neutral Si dangling bonds in a-Si:H based on the presence of floating bonds. The model can explain the metastabilization of the broken weak bonds without the movement of H atoms. The broad, the narrow, and the dangling bond components of the LESR signal have been attributed to holes captured at negatively charged floating bonds, electrons trapped at antibonding states of weak bonds and photoexcited carriers captured at charged dangling bonds, respectively.