Author:
Meeder A.,Marrón D. Fuertes,Lux-Steiner M. Ch.,Kunst M.
Abstract
AbstractApplying the (contactless) time-resolved microwave conductivity technique (TRMC) to CVD- and PVD-grown device grade CuGaSe2 thin films experimental data of hole mobility and lifetime are obtained. TRMC data of stoichiometric and Gallium-rich, front and back side illuminated thin films are presented. In the Gallium-rich samples an extended decay over several orders of magnitude is observed. In the stoichiometric samples the majority of excess carriers decays nearly instantaneously. Differences in charge carrier transport at the front and the back side are discussed in the framework of a two layer defect model, previously reported in such absorber layers.
Publisher
Springer Science and Business Media LLC
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