Electronically active defects in CuGaSe 2 -based heterojunction solar cells-Reference-Cited by-同舟云学术

Electronically active defects in CuGaSe 2 -based heterojunction solar cells

Published:2000-02 Issue: Volume:361-362 Page:415-419
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Jasenek A,Rau U,Nadenau V,Thiess D,Schock H.W

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Proc. 22nd IEEE Photovoltaic Specialists Conf.;Klenk,1991

2. V. Nadenau, D. Hariskos, H.W. Schock, in: H.A. Ossenbrink, P. Helm, H. Ehmann (Eds.), Proc. 14th Euro. Photovoltaic Sol. Energy Conf., Stephens, Bedford, UK, 1997, p. 1250.

3. D. Lincot, J. Vedel, in: A. Luque, G. Sala, W. Palz, G. dos Santos, P. Helm (Eds.), Proc. 10th EU Photovoltaic Spec. Conf., Kluwer, Dordrecht, Netherlands, 1991, p. 931.

4. Microstructural study of the CdS/CuGaSe2 interfacial region in CuGaSe2 thin film solar cells

5. Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2based heterojunctions

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