In-Situ Spectroscopic Ellipsometry and Optical Emission Studies of CF4/O2 Plasma Etching of Silicon Nitride

Abstract

ABSTRACTElectron cyclotron resonance (ECR) CF4/ 02 plasma etching of silicon nitride (SixNy) deposited by plasma enhanced chemical vapor deposition (PECVD) has been examined in-situ by means of spectroscopic ellipsometry (SE) and optical emission (OE). The observed real-time etchrate and the relative intensity of emission of atomic fluorine at 703.7 nm are measured simultaneously and both are found to change with time during the etch in a reproducible manner. The evolution of the real-time etch rate and the fluorine emission intensity depends on the machine input settings and the extent to which the chamber has been exposed to CF4/ 02 plasma prior to sample introduction. In general the initial 10 to 40 seconds of etching reveal a rapid increase in the etch rate, the remainder of the etch exhibiting an etch rate which typically increases gradually until the etch is stopped. This variation in etch behavior with time during the etch process complicates the task of precisely and reliably etching ultrathin (< 50 nm) films, necessitating real-time control based upon in-situ sensors, the end objective of this work. The dependence of the evolution of the SixNy etch rate on microwave power, chamber pressure, and gas in-flow rate is presented and the implications of these dependencies on the implementation of real-time feedback control are discussed.