Author:
Ruddell F.H.,Armstrong B.M.,Gamble H.S.
Abstract
AbstractThis paper describes the growth of epitaxially aligned SiC on < 111 > and < 100 > silicon substrates at 970°C, using rapid thermal LPCVD. A growth mechanism comprising carbonation of silane adspecies has been deduced.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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