Influence of the photoinduced EL2 Grating on Electron and Hole Gratings Generated in GaAs

Abstract

ABSTRACTDynamic gratings of free carriers are generated from optical excitation of the deep EL2 level in semi insulating gallium arsenide with nanosecond pulses. The nonlinear modification of the crystal index of refraction is evidenced by degenerate four wave mixing experiments. In regards to the sample parameters, a fair agreement is obtained between the experimental values and the theoretical predictions derived from the Drude-Lorentz model and the anharmonic motion of carriers.