Abstract
There is a confusion present in much of the recent literature on semiconductor nonlinear refraction. This confusion originates from the development of several apparently independent theories. Here we consider five theoretical approaches to the calculation of the nonlinear susceptibility (
X
(3)
) and show that each is associated with the effect of interband transitions, even though some are conventionally referred to as free-carrier theories. By comparing groups of terms in
X
(3)
the physical equivalence of the theories is established. New near-resonance calculations are presented, and the circumstances in which each of the various theories can be applied is discussed.
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