Nitrogen Doping of ZnO Prepared by Organometallic Chemical Vapor Deposition

Abstract

ABSTRACTZnO layers were grown by organometallic chemical vapor deposition. Films were deliberately doped with nitrogen by incorporating ammonia into the ambient during growth. The resistivity of the films depended strongly on the ammonia partial pressure. The layers were n-type with resistivities in the range of 0.1 − 360 ohm-cm. The films exhibited strong ultraviolet nearbandedge photoluminescent emission. Emission was ascribed to recombination of bound excitons at neutral acceptors, presumably involving substitutional nitrogen.