Author:
Bethke S.,Pan H-C,Wessels B. W.
Abstract
ABSTRACTZnO layers have been heteroepitaxially deposited on sapphire using organometallic chemical vapor deposition at atmospheric pressure. The quality of the layers was assessed using photoluminescence spectroscopy at 16K. The layers exhibited strong ultraviolet near bandedge luminescence. The dependence of near bandedge and deep level photoluminescence emission on deposition conditions was examined.
Publisher
Springer Science and Business Media LLC
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