Author:
Earles Susan,Law Mark,Jones Kevin,Brindos Rich,Talwar omit
Abstract
AbstractTo investigate the effects of ramp rate on the transient enhanced diffusion of boron in silicon, laser thermal processing (LTP) in the nonmelt regime has been investigated. A nonmelt laser anneal has been performed on a 5 keV, 1e15 boron implant. The implant energy of 5keV was chosen to simplify analysis. A rapid thermal anneal (RTA) at 1000°C and furnace anneals at 750 °C were used to show the effect of post annealing on the LTPd samples. Results show the sheet resistance drops by up to a factor of two for samples receiving the nonmelt LTP and the RTA compared with the samples just receiving the RTA. An increase in the hall mobility was also observed for the samples receiving the LTP. The nonmelt LTP was also shown to strongly affect the extended defect density. During post anneals, a higher density of smaller defects evolved in the samples receiving the LTP.
Publisher
Springer Science and Business Media LLC
Reference2 articles.
1. [2] Cowern N.E.B. , Mannino G. , Roozeboom F. , Stolk P.A. , Huizing H.G.A. , Berkum J.G.M. van , Toan N.N. , Woerlee P.H. , ECS Meeting, Seattle, May 1999, paper 501
2. Energetics of Self-Interstitial Clusters in Si
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献