Time-Resolved Spectroscopy of Plasma Resonances In Highly Excited Silicon And Germanium-Reference-Cited by-同舟云学术

Time-Resolved Spectroscopy of Plasma Resonances In Highly Excited Silicon And Germanium

Published:1985 Issue: Volume:51 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Malvezzi A. M.,Huang C. Y.,Kurz H.,Bloembergen N.

Abstract

ABSTRACTThe dynamics of the electron-hole plasma in silicon and germanium samples irradiated by 20 ps, 532 nm laser pulses has been investigated in the near infrared by time-resolved picosecond optical spectroscopy. The experimental reflectivities and transmissions are compared with the redictions of the thermal model for degenerate carrier distributions through the Drue iformalism. Above a certain fluence, a significant deviation between measured and calculated values indicates a strong increase of the recombination rate as soon as the plasma resonances become comparable with the band gaps. These new plasmon-aided recombination channels are particularly pronounced in germanium.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference16 articles.

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3. Time‐resolved temperature measurement of picosecond laser irradiated silicon

4. Optical heating of electron‐hole plasma in silicon by picosecond pulses

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