Interstitial oxygen determination in heavily doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346647
Reference16 articles.
1. Structure and Properties of The Oxygen Donor
2. Internal Gettering in Czochralski Silicon
3. Direct Comparison of FTIR and SIMS Calibrations for [O] in Silicon
4. SIMS Measurements of Oxygen in Heavily-Doped Silicon
5. Determination of Oxygen in Silicon by Photon Activation Analysis for Calibration of the Infrared Absorption
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1. Infrared Characterization of Device-Quality Silicon;Handbook of Vibrational Spectroscopy;2006-08-15
2. Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon;Materials Science and Engineering B;2003-09-15
3. Evaluation of the precipitate contribution to the infrared absorption in interstitial oxygen measurements in silicon;Applied Physics Letters;2001-12-17
4. Defects Involving Oxygen in Crystalline Silicon;Solid State Phenomena;2001-12
5. Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon;Review of Scientific Instruments;1999-09
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