Author:
Sudhama C.,Carrano J. C.,Parker L. H.,Chikarmane V.,Lee J. C.,Tasch A. F.,Miller W.,Abt N.,Shepherd W. H.
Abstract
ABSTRACTThis paper investigates the issues in the scaling of thin film PZT (Lead-Zirconate-Titanate) capacitors for DRAM (Dynamic Random Access Memories) applications. The test structures used were MIM (metal-insulator-metal) capacitors with platinum electrodes and PZT deposited using a sol-gel process. Charge storage density (Q'c), leakage current density (JL), unipolar switching time to 10% decay (ts), time dependent dielectric breakdown (TDDB) and electrical fatigue have been analyzed. Unipolar switching time has been modeled as an RC time constant, where C is electric-field dependent. Q'c at a given electric field appears to remain constant over the range of film thicknesses and electrode areas studied. Leakage current density and time-to-breakdown (tBD) for a given electric field degrade with decreasing film thickness. Unipolar stressing causes considerably less fatigue than bipolar stressing, and after 2 × 1011 cycles, a 400nm film still exhibits sufficient Q'c for DRAM operation.
Publisher
Springer Science and Business Media LLC
Reference6 articles.
1. 6. Moazzami R. et al., International Reliability Physics Symposium, 1990, pp 231.
2. 4. Little E A. , Physical Review, 1959, pp 978–984.
3. Analysis of electrical switching in sub-micron KNO3thin films
4. 1. Carrano J. et al., IEDM Tech Digest, 1989, pp 255.
5. Ferroelectric materials for 64 Mb and 256 Mb DRAMs
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