Author:
Maszara W.,Sadana D.K.,Rozgonyi G.A.,Sands T.,Washburn J.,Wortman J.J.
Abstract
ABSTRACTThe geometry, origin, and diffusion along hairpin defects in Si were
investigated using TEM and SIMS techniques. The defect that grows from the
amorphous-crystalline (a/c) interface following solid phase epitaxy growth
front was found to be a perfect dislocation with a/2(101) Burgers vector.
Misoriented microcrystallites within the a/c transition region are proposed
to be nucleation sites for the hairpin dislocations. The density of the
crystallites increases with an overall coarsening of the interface which
occurs during dynamic annealing processes stimulated by implantation or
post-implantation low temperature annealing. Hairpin dislocations were found
to pipe-diffuse boron at much higher rates than bulk processes significantly
shifting dopant profiles. The diffusion coefficient of boron pipe diffusion
at 1150°C was found to be about 104 times higher than the bulk
one.
Publisher
Springer Science and Business Media LLC
Cited by
9 articles.
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