Author:
Barrett Neil J.,Bartle D.C.,Todd A.G.,Grange J.D.
Abstract
ABSTRACTThe rapid annealing of Be implanted GaAs has produced electrical activations
of 70% for doses of 5 × 1014 cm−2 and hole profiles
similar to the as implanted distribution. Si implanted GaAs has also been
investigated using doses of 1 and 2 × 1014 cm−2 with
sheet resistivities of 40 Ω/square after rapid thermal annealing. GaAs has
been annealed with W-Si on the surface for the application of self aligned
gate FET technology. Temperature cycles upto 850°C are required to activate
the implanted dopant. Such cycles do not cause inter diffusion between the
W-Si and GaAs or deterioration of the metallisation surface morphology.
Publisher
Springer Science and Business Media LLC
Cited by
6 articles.
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