Two-Step Laser Recrystallization of Silicon Stripes in Sio2 Grooves for Crystallographic Orientation Control

Abstract

ABSTRACTWe demonstrate a new two step laser recrystallization for crystallographic orientation control. In the cw Ar ion laser recrystallization of silicon stripes in the structure consisting of SiO2 grooves/polycrystalline Si sublayer/backing substrates, first, one edge of poly-Si stripes is intentionally recrystallized under relatively low laser power and a long dwell time in order to form a strong <100> texture with lamellar grains, second, poly-Si stripes are fully recrystallized using the above <100> texture as seed crystals by scanning a laser beam along the stripes. We discuss a strong <100> texture formation related to partially molten state in the first process of secondary seed formation, and use of a grooved structure with poly-Si sublayer suppressing edge nucleation during lateral epitaxy.